Titanium dioxide semiconductor photocatalytic material ion doping

Author: Chen Jianhua
Publisher:
Publish Date: 2006-12-01
Features: This book systematically introduces the experimental results, related testing, analysis, and discussion of doping on ionic TiO2 powders and films. It is a specialized monograph that systematically describes ion doping in TiO2, with high academic level and reference value. The book systematically investigates the doping effects of 13 metal ions, including Fe3+, Co2+, Ni2+, Cu2+, Zn2+, etc., on powder TiO2 and TiO2 thin films loaded on 6 carrier surfaces such as glass, ceramics, titanium sheets, stainless steel, aluminum sheets, and glazed tiles. It proposes the concept of interactive effects between ion doping and carriers. Ultraviolet spectroscopy and infrared spectroscopy are used to study the influence of ion doping on the intrinsic absorption and impurity absorption of TiO2. The doping energy level positions of relevant ions in the TiO2 semiconductor are determined, and electron (hole) trapping models for deep and shallow doping are established. X-ray diffraction is used to study the effects of ion doping concentration and ion type on the phase and particle size of TiO2, and a phase model for ion doping is established. Positron annihilation technology is used to study the lattice defects and electron density of 13 ion-doped TiO2 powders. Band theory and double-layer theory of semiconductor electrochemistry are employed to establish the ion doping mechanism and model of TiO2. This book is suitable for undergraduate and graduate students in environmental science and engineering, materials science and engineering, and chemical engineering. It can also be referenced by relevant scientific and technical personnel.