Digital CMOS VLSI Analysis and Design Fundamentals

Author: Gan Xuewen
Publisher:
Publishing Time: Not available
Features: This book comprehensively and systematically explains the fundamental principles and design of digital CMOS VLSI. The book is divided into 11 chapters. The first two chapters analyze the basic principles of MOS transistors and the performance of devices scaled down proportionally. Chapter 3 introduces the manufacturing process of CMOS VLSI. Chapters 4 to 7 and Chapter 9 discuss the structural characteristics, working principles, and design methods of CMOS VLSI, along with many circuit examples. Chapter 8 introduces new structures and circuits for VLSI memory. The last two chapters cover the rapidly developing SOI-CMOS and BiCMOS new technologies of the 1990s. This book emphasizes fundamental knowledge while reflecting the latest advancements in CMOS VLSI. The content is well-organized, thoroughly explained, and up-to-date, making it convenient for self-study. It can serve as a textbook for senior undergraduate and graduate students in microelectronics or related fields, as well as an important reference for engineers engaged in microelectronics research, circuit design, production, and application. Additionally, it is a valuable reference for engineers from other fields who wish to understand large-scale and very large-scale integrated circuits.