Polycrystalline Silicon Thin Films and Their Applications in Integrated Circuits

Author: Wang Yangyuan
Publisher:
Publish Date: 2001-01-01
Features: This book was first published in 1988. Due to the rapid development of integrated circuit technology and the continuous expansion of the application fields of polycrystalline silicon thin films, nearly half of the original content has become outdated in line with today's technological advancements. This revision includes substantial additions and deletions, and the structure has been expanded from eight chapters to twelve. The modifications and supplementary content are all new technological achievements that have emerged over the 10 years since the original book was written. The content of this book can be divided into two parts. The first six chapters focus on the fundamental properties and process mechanisms of polycrystalline silicon thin films, such as the electrical and optical properties of polycrystalline silicon thin films, the diffusion of impurities in polycrystalline silicon thin films, ion implantation doping, oxidation, deposition of polycrystalline silicon thin films, and polycrystalline silicon/silicide thin films, among others. The last six chapters focus on applications, including the use of polycrystalline silicon thin films in MOS integrated circuits and bipolar integrated circuits, microelectromechanical systems, as well as display devices and three-dimensional integrated circuits. This book can serve as a reference for science and technology personnel engaged in semiconductor device and integrated circuit research and design, and it can also be used as a textbook or teaching reference for senior undergraduate and graduate students in microelectronics, semiconductor, and applied physics programs in universities and colleges of science and engineering.