Silicon-germanium superlattices and low-dimensional quantum structures

Author: Sheng Chi et al
Publisher:
Publish Date: 2004-08-01
Features: This book systematically introduces the development and some new advances in Si molecular beam epitaxy (MBE) and Si1-xGex/Si low-dimensional quantum system research. Based on the current international development trends, it provides a relatively complete overview of the achievements in material growth, characterization, physical property research, and device applications of Si MBE and Si1-xGex/Si low-dimensional quantum systems over the past decade at the State Key Laboratory of Applied Surface Physics, Fudan University. Chapter 1 of the book introduces the fundamental physical properties of the Si1-xGex/Si system, Chapter 2 covers Si MBE equipment, real-time monitoring and analysis techniques, and various epitaxial growth technologies for different types of Si1-xGex/Si materials, Chapter 3 discusses the characterization of Si1-xGex/Si hetero-materials, Chapters 4 and 5 respectively elaborate on and introduce the electrical and optical properties of Si1-xGex/Si heterostructures, superlattices, and quantum wells, while also introducing the newly developed Si-based Ge quantum dot research. Chapter 6 covers the growth of quantum dots and their optical and electrical properties, and Chapter 7 explores the device applications of Si1-xGex/Si heterostructure materials. This book can serve as a reference for researchers and graduate students in related fields such as semiconductor physics, material testing, and device fabrication. It is particularly suitable as an introductory resource for scientists who wish to engage in Si1-xGex/Si materials, physics, and device research.