Semiconductor devices and integrated circuits radiation effects

Author: Chen Panxun
Publisher:
Publish Date: 2005-01-01
Features: This book provides a comprehensive introduction to the damage mechanisms and effects of various typical semiconductor devices and integrated circuits under nuclear radiation (primarily neutron flux, total dose, and dose rate, etc.) and space radiation environments. The main contents include: a brief history of domestic and international nuclear radiation effects research, research objects and methods, analysis of radiation environments such as nuclear explosions, space, simulation sources, and nuclear power, displacement, ionization, dose enhancement, and single-event radiation effect mechanisms, radiation effects on various diodes, microwave devices, bipolar and unijunction transistors, heterojunction devices, field-effect transistors, various linear and digital integrated circuits, etc. Single-event effects caused by cosmic rays, heavy ions, protons, and neutrons in large-scale and very large-scale integrated circuits, dose enhancement effects in X-ray and low-energy gamma-ray radiation devices and circuits, enhanced damage in devices and circuits caused by low dose rates, radiation effects on infrared detectors, optoelectronic and electro-optic devices, laser diodes, and CCDs, etc. optical devices.