Author: Writing Team of This Book
Publisher:
Publication Date: 2001-12-01
Features: This book collects and organizes tens of thousands of MOSFET models produced by hundreds of domestic and international manufacturers before 2001. The book is divided into three parts: The first part introduces methods foring MOSFET materials, characteristics, applications, etc. The second part presents information in table form, including device models, manufacturer names, performance, parameters, replacement models, and reference diagrams of device outlines. The first column is the device model, arranged in alphabetical order by English letters (A, B, C, D) and numerical order (1, 2, 3, 4). The second column is the manufacturer name. The third column is the device application and parameters, detailing the application of the device and parameters such as the gate-source or drain-source limit voltage (V), maximum drain current (A), maximum drain dissipation power or collector dissipation power (specifically for IGBTs) (W), and transconductance (gm). The fourth column is the figure number. The fifth column lists similar replacement models domestically and internationally, providing basis for substitution, and explains the conditions for certain device substitutions in the appendix. The sixth column is the reference diagram of the device outline, arranging the device outlines on the same page as needed. The third part is the dimensional drawings of MOSFET devices, for designers to use in designing electrical products. The features of this book are: rich content, accurate data, illustrations and text, convenient to, beautiful layout, and good value for money.
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