Nanometer CMOS devices

Author: Gan Xuewen
Publisher:
Publish Date: 2004-01-01
Features: This book introduces the challenges faced by CMOS devices when scaled down to nanoscale, as well as the new processes and structures developed to improve device performance. The book consists of six chapters, covering topics such as the trend of proportional scaling of CMOS devices, the challenges of scaling CMOS devices to nanoscale, lithographic techniques for achieving nanoscale patterns, gate engineering in nanoscale CMOS devices, channel engineering in nanoscale CMOS devices, and various novel nanoscale CMOS device structures and implementation techniques. The book is rich in original content and reflects the latest developments in CMOS devices. It can serve as a teaching reference for senior undergraduate and graduate students in microelectronics. It also holds significant reference value for scientists and engineers engaged in CMOS device and integrated circuit design and research, as well as for technical personnel in other fields of information who wish to learn about the latest advancements in microelectronics technology.